Name: DMN6070SY-13
Brand: Diodes Incorporated
SKU: DMN6070SY-13
Price: 0.14 USD
Availability: InStock

REF: DMN6070SY-13 Diodes Incorporated

DMN6070SY-13

Diodes Incorporated

MOSFET N-CH 60V 4.1A SOT89-3

DMN6070SY-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 60V 4.1A SOT89-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-243AA.

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In Stock: 3,575

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	85mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12.3 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	588 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-89-3
Package / Case	TO-243AA