DMN6010SCTB-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMN6010SCTB-13 Diodes Incorporated
DMN6010SCTB-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V TO263 T&R

DMN6010SCTB-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET BVDSS: 41V~60V TO263 T&R. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

In Stock: 4,886

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C128A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2692 pF @ 25 V
FET Feature-
Power Dissipation (Max)5W (Ta), 312W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263AB (D²PAK)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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