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DMN33D8LDWQ-7

In Stock: 6,756
DMN33D8LDWQ-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMN33D8LDWQ-7 Diodes Incorporated
DMN33D8LDWQ-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT363 T&R

DMN33D8LDWQ-7 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET BVDSS: 25V~30V SOT363 T&R. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-TSSOP, SC-88, SOT-363, power - max 350mW (Ta).

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In Stock: 6,756

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C250mA (Ta)
Rds On (Max) @ Id, Vgs2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs1.23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds48pF @ 5V
Power - Max350mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363

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