Name: DMN3110LCP3-7
Brand: Diodes Incorporated
SKU: DMN3110LCP3-7
Availability: InStock

REF: DMN3110LCP3-7 Diodes Incorporated

DMN3110LCP3-7

MOSFET N-CH 30V 3.2A 3DFN

DMN3110LCP3-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 30V 3.2A 3DFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 3-XFDFN.

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In Stock: 7,316

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 8V
Rds On (Max) @ Id, Vgs	69mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.52 nC @ 4.5 V

Vgs (Max)	12V
Input Capacitance (Ciss) (Max) @ Vds	150 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.38W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X2-DFN1006-3
Package / Case	3-XFDFN