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DMN30H4D0LFDE-13

In Stock: 4,964
DMN30H4D0LFDE-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMN30H4D0LFDE-13 Diodes Incorporated
DMN30H4D0LFDE-13

Diodes Incorporated

MOSFET N-CH 300V 550MA 6UDFN

DMN30H4D0LFDE-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 300V 550MA 6UDFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-PowerUDFN.

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In Stock: 4,964

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300 V
Current - Continuous Drain (Id) @ 25°C550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 10V
Rds On (Max) @ Id, Vgs4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7.6 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds187.3 pF @ 25 V
FET Feature-
Power Dissipation (Max)630mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageU-DFN2020-6 (Type E)
Package / Case6-PowerUDFN

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