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DMN3035LWN-7

In Stock: 1,214
DMN3035LWN-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMN3035LWN-7 Diodes Incorporated
DMN3035LWN-7

Diodes Incorporated

MOSFET 2N-CH 30V 5.5A 8VDFN

DMN3035LWN-7 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N-CH 30V 5.5A 8VDFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN, power - max 770mW.

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In Stock: 1,214

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5.5A
Rds On (Max) @ Id, Vgs35mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds399pF @ 15V
Power - Max770mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackageV-DFN3020-8 (Type N)

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