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DMN3035LWN-13

In Stock: 8,540
DMN3035LWN-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMN3035LWN-13 Diodes Incorporated
DMN3035LWN-13

Diodes Incorporated

MOSFET 2 N-CH 5.5A VDFN3020-8

DMN3035LWN-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2 N-CH 5.5A VDFN3020-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 8,540

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C5.5A (Ta)
Rds On (Max) @ Id, Vgs35mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds399pF @ 15V
Power - Max-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackageV-DFN3020-8

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