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DMN3032LFDBWQ-13

In Stock: 6,809
DMN3032LFDBWQ-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMN3032LFDBWQ-13 Diodes Incorporated
DMN3032LFDBWQ-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V U-DFN2020-

DMN3032LFDBWQ-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET BVDSS: 25V~30V U-DFN2020-. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-UDFN Exposed Pad, power - max 820mW.

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In Stock: 6,809

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5.5A (Ta)
Rds On (Max) @ Id, Vgs30mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds500pF @ 15V
Power - Max820mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UDFN Exposed Pad
Supplier Device Package-

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