Name: DMN3032LE-13
Brand: Diodes Incorporated
SKU: DMN3032LE-13
Price: 0.63 USD
Availability: InStock

REF: DMN3032LE-13 Diodes Incorporated

DMN3032LE-13

Diodes Incorporated

MOSFET N-CH 30V 5.6A SOT223

DMN3032LE-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 30V 5.6A SOT223. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-261-4, TO-261AA.

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In Stock: 6,739

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	29mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11.3 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	498 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223-3
Package / Case	TO-261-4, TO-261AA