Name: DMN3030LFG-7
Brand: Diodes Incorporated
SKU: DMN3030LFG-7
Price: 0.18 USD
Availability: InStock

REF: DMN3030LFG-7 Diodes Incorporated

DMN3030LFG-7

Diodes Incorporated

MOSFET N-CH 30V 5.3A PWRDI3333-8

DMN3030LFG-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 30V 5.3A PWRDI3333-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 7,618

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	18mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17.4 nC @ 10 V

Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	751 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	900mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerDI3333-8
Package / Case	8-PowerVDFN