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DMN3029LFG-13

In Stock: 4,384
DMN3029LFG-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMN3029LFG-13 Diodes Incorporated
DMN3029LFG-13

Diodes Incorporated

MOSFET N-CH 30V 5.3A PWRDI333-8

DMN3029LFG-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 30V 5.3A PWRDI333-8. Key specifications: mounting type Surface Mount, package / case 8-PowerVDFN.

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In Stock: 4,384

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs18.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.3 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds580 pF @ 15 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackagePowerDI3333-8
Package / Case8-PowerVDFN

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