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DMN3016LDN-13

In Stock: 1,956
DMN3016LDN-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMN3016LDN-13 Diodes Incorporated
DMN3016LDN-13

Diodes Incorporated

MOSFET 2 N-CH 9.2A VDFN3030-8

DMN3016LDN-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2 N-CH 9.2A VDFN3030-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 1,956

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C9.2A (Ta)
Rds On (Max) @ Id, Vgs20mOhm @ 11A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1415pF @ 15V
Power - Max-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackageV-DFN3030-8 (Type J)

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