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DMN3012LDG-13

In Stock: 4,776
DMN3012LDG-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMN3012LDG-13 Diodes Incorporated
DMN3012LDG-13

Diodes Incorporated

MOSFET BVDSS: 25V-30V POWERDI333

DMN3012LDG-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET BVDSS: 25V-30V POWERDI333. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerLDFN, power - max 2.2W (Tc).

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In Stock: 4,776

Specifications

14 parameters
Product StatusObsolete
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id2.1V @ 250µA, 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.1nC @ 4.5V, 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 15V, 1480pF @ 15V
Power - Max2.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerLDFN
Supplier Device PackagePowerDI3333-8 (Type D)

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