DMN29M9UFDF-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMN29M9UFDF-13 Diodes Incorporated
DMN29M9UFDF-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V U-DFN2020-

DMN29M9UFDF-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET BVDSS: 25V~30V U-DFN2020-. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-UDFN Exposed Pad.

In Stock: 1,974

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs13.5mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14.6 nC @ 10 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds655 pF @ 8 V
FET Feature-
Power Dissipation (Max)1.2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageU-DFN2020-6 (Type F)
Package / Case6-UDFN Exposed Pad

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