Name: DMN2501UFB4-7
Brand: Diodes Incorporated
SKU: DMN2501UFB4-7
Price: 0.10 USD
Availability: InStock

REF: DMN2501UFB4-7 Diodes Incorporated

DMN2501UFB4-7

Diodes Incorporated

MOSFET N-CH 20V 1A X2-DFN1006-3

DMN2501UFB4-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 20V 1A X2-DFN1006-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 3-XFDFN.

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In Stock: 5,897

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2 nC @ 10 V

Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	82 pF @ 16 V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X2-DFN1006-3
Package / Case	3-XFDFN