Name: DMN2310UFB4-7B
Brand: Diodes Incorporated
SKU: DMN2310UFB4-7B
Price: 0.05 USD
Availability: InStock

REF: DMN2310UFB4-7B Diodes Incorporated

DMN2310UFB4-7B

Diodes Incorporated

MOSFET BVDSS: 8V~24V X2-DFN1006-

DMN2310UFB4-7B is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET BVDSS: 8V~24V X2-DFN1006-. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 3-XFDFN.

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In Stock: 3,955

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	175mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.7 nC @ 4.5 V

Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	38 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	710mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X2-DFN1006-3
Package / Case	3-XFDFN