DMN21D2UFB-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMN21D2UFB-7 Diodes Incorporated
DMN21D2UFB-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V X1-DFN1006-

DMN21D2UFB-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET BVDSS: 8V~24V X1-DFN1006-. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 3-UFDFN.

In Stock: 5,097

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C760mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs0.93 nC @ 10 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds27.6 pF @ 16 V
FET Feature-
Power Dissipation (Max)380mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageX1-DFN1006-3
Package / Case3-UFDFN

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