DMN2029UVT-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMN2029UVT-13 Diodes Incorporated
DMN2029UVT-13

Diodes Incorporated

MOSFET N-CH 6.8A TSOT26

DMN2029UVT-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 6.8A TSOT26. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6.

In Stock: 7,356

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs24mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTSOT-26
Package / CaseSOT-23-6 Thin, TSOT-23-6

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