DMN2023UCB4-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMN2023UCB4-7 Diodes Incorporated
DMN2023UCB4-7

Diodes Incorporated

MOSFET 2N-CH X1-WLB1818-4

DMN2023UCB4-7 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N-CH X1-WLB1818-4. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 4-XFBGA, WLBGA, power - max 1.45W.

In Stock: 2,625

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual) Common Drain
FET FeatureStandard
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs37nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds3333pF @ 10V
Power - Max1.45W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case4-XFBGA, WLBGA
Supplier Device PackageX1-WLB1818-4

Need a Quote for DMN2023UCB4-7?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →