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DMN2022UNS-7

In Stock: 2,256
DMN2022UNS-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMN2022UNS-7 Diodes Incorporated
DMN2022UNS-7

Diodes Incorporated

MOSFET 2 N-CH 20V POWERDI3333-8

DMN2022UNS-7 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2 N-CH 20V POWERDI3333-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN, power - max 1.2W.

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In Stock: 2,256

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual) Common Drain
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C10.7A (Ta)
Rds On (Max) @ Id, Vgs10.8mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1870pF @ 10V
Power - Max1.2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePowerDI3333-8 (Type UXB)

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