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DMN2019UTS-13

In Stock: 9,272
DMN2019UTS-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMN2019UTS-13 Diodes Incorporated
DMN2019UTS-13

Diodes Incorporated

MOSFET 2N-CH 20V 5.4A TSSOP-8

DMN2019UTS-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N-CH 20V 5.4A TSSOP-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-TSSOP (0.173", 4.40mm Width), power - max 780mW.

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In Stock: 9,272

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C5.4A
Rds On (Max) @ Id, Vgs18.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds143pF @ 10V
Power - Max780mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

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