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DMN2016UTS-13

In Stock: 8,606
DMN2016UTS-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMN2016UTS-13 Diodes Incorporated
DMN2016UTS-13

Diodes Incorporated

MOSFET 2N-CH 20V 8.58A 8-TSSOP

DMN2016UTS-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N-CH 20V 8.58A 8-TSSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-TSSOP (0.173", 4.40mm Width), power - max 880mW.

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In Stock: 8,606

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C8.58A
Rds On (Max) @ Id, Vgs14.5mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1495pF @ 10V
Power - Max880mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

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