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DMN2016LHAB-7

In Stock: 7,760
DMN2016LHAB-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMN2016LHAB-7 Diodes Incorporated
DMN2016LHAB-7

Diodes Incorporated

MOSFET 2N-CH 20V 7.5A 6UDFN

DMN2016LHAB-7 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N-CH 20V 7.5A 6UDFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-UDFN Exposed Pad, power - max 1.2W.

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In Stock: 7,760

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C7.5A
Rds On (Max) @ Id, Vgs15.5mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1550pF @ 10V
Power - Max1.2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UDFN Exposed Pad
Supplier Device PackageU-DFN2030-6 (Type B)

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