DMN2016LFG-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMN2016LFG-7 Diodes Incorporated
DMN2016LFG-7

Diodes Incorporated

MOSFET 2N-CH 20V 5.2A 8UDFN

DMN2016LFG-7 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N-CH 20V 5.2A 8UDFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerUDFN, power - max 770mW.

In Stock: 5,969

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C5.2A
Rds On (Max) @ Id, Vgs18mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1472pF @ 10V
Power - Max770mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerUDFN
Supplier Device PackageU-DFN3030-8

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