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DMN2014LHAB-7

In Stock: 3,760
DMN2014LHAB-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMN2014LHAB-7 Diodes Incorporated
DMN2014LHAB-7

Diodes Incorporated

MOSFET 2N-CH 20V 9A 6-UDFN

DMN2014LHAB-7 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N-CH 20V 9A 6-UDFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-UFDFN Exposed Pad, power - max 800mW.

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In Stock: 3,760

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C9A
Rds On (Max) @ Id, Vgs13mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1550pF @ 10V
Power - Max800mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UFDFN Exposed Pad
Supplier Device PackageU-DFN2030-6 (Type B)

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