Name: DMN2011UTS-13
Brand: Diodes Incorporated
SKU: DMN2011UTS-13
Price: 0.61 USD
Availability: InStock

REF: DMN2011UTS-13 Diodes Incorporated

DMN2011UTS-13

Diodes Incorporated

MOSFET N-CH 20V 21A 8TSSOP

DMN2011UTS-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 20V 21A 8TSSOP. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-TSSOP (0.173", 4.40mm Width).

Datasheet Request a Quote

In Stock: 3,163

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	11mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V

Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	2248 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.3W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSSOP
Package / Case	8-TSSOP (0.173", 4.40mm Width)