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DMN2011UFX-7

In Stock: 5,006
DMN2011UFX-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMN2011UFX-7 Diodes Incorporated
DMN2011UFX-7

Diodes Incorporated

MOSFET 2N-CH 20V 12.2A DFN2050-4

DMN2011UFX-7 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N-CH 20V 12.2A DFN2050-4. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 4-VFDFN Exposed Pad, power - max 2.1W.

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In Stock: 5,006

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C12.2A (Ta)
Rds On (Max) @ Id, Vgs9.5mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2248pF @ 10V
Power - Max2.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case4-VFDFN Exposed Pad
Supplier Device PackageV-DFN2050-4

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