Name: DMN2011UFDE-7
Brand: Diodes Incorporated
SKU: DMN2011UFDE-7
Price: 0.68 USD
Availability: InStock

REF: DMN2011UFDE-7 Diodes Incorporated

DMN2011UFDE-7

Diodes Incorporated

MOSFET N-CH 20V 11.7A 6UDFN

DMN2011UFDE-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 20V 11.7A 6UDFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-PowerUDFN.

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In Stock: 5,913

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	11.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	9.5mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10 V

Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	2248 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	610mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	U-DFN2020-6 (Type E)
Package / Case	6-PowerUDFN