Name: DMN2005UFG-7
Brand: Diodes Incorporated
SKU: DMN2005UFG-7
Price: 0.62 USD
Availability: InStock

REF: DMN2005UFG-7 Diodes Incorporated

DMN2005UFG-7

Diodes Incorporated

MOSFET N-CH 20V 18.1A PWRDI3333

DMN2005UFG-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 20V 18.1A PWRDI3333. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN.

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In Stock: 1,502

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	18.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	4.6mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	164 nC @ 10 V

Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	6495 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.05W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerDI3333-8
Package / Case	8-PowerVDFN