DMN2005LP4K-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMN2005LP4K-7 Diodes Incorporated
DMN2005LP4K-7

Diodes Incorporated

MOSFET N-CH 20V 200MA 3DFN

DMN2005LP4K-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 20V 200MA 3DFN. Key specifications: mounting type Surface Mount, operating temperature -65°C ~ 150°C (TJ), package / case 3-XFDFN.

In Stock: 7,398

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Rds On (Max) @ Id, Vgs1.5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id900mV @ 100µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds41 pF @ 3 V
FET Feature-
Power Dissipation (Max)400mW (Ta)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageX2-DFN1006-3
Package / Case3-XFDFN

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