DMN10H220LVT-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMN10H220LVT-7 Diodes Incorporated
DMN10H220LVT-7

Diodes Incorporated

MOSFET N-CH 100V 1.87A TSOT26

DMN10H220LVT-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 100V 1.87A TSOT26. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6.

In Stock: 8,403

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C1.87A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs220mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.3 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds401 pF @ 25 V
FET Feature-
Power Dissipation (Max)1.67W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTSOT-26
Package / CaseSOT-23-6 Thin, TSOT-23-6

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