DMN10H220LPDW-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMN10H220LPDW-13 Diodes Incorporated
DMN10H220LPDW-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

DMN10H220LPDW-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET BVDSS: 61V~100V POWERDI50. Key specifications: mounting type Surface Mount, Wettable Flank, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN, power - max 2.2W (Ta).

In Stock: 6,163

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Rds On (Max) @ Id, Vgs222mOhm @ 2A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds384pF @ 25V
Power - Max2.2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Package / Case8-PowerTDFN
Supplier Device PackagePowerDI5060-8 (Type R)

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