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DMN10H220LDV-7

In Stock: 3,927
DMN10H220LDV-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMN10H220LDV-7 Diodes Incorporated
DMN10H220LDV-7

Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

DMN10H220LDV-7 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET BVDSS: 61V~100V POWERDI33. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerVDFN, power - max 1.8W (Ta), 40W (Tc).

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In Stock: 3,927

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C10.5A (Tc)
Rds On (Max) @ Id, Vgs222mOhm @ 2A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds366pF @ 50V
Power - Max1.8W (Ta), 40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device PackagePowerDI3333-8 (Type UXC)

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