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DMN1029UFDB-7

In Stock: 930
DMN1029UFDB-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMN1029UFDB-7 Diodes Incorporated
DMN1029UFDB-7

Diodes Incorporated

MOSFET 2N-CH 12V 5.6A 6UDFN

DMN1029UFDB-7 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET 2N-CH 12V 5.6A 6UDFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-UDFN Exposed Pad, power - max 1.4W.

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In Stock: 930

Specifications

14 parameters
Product StatusActive
FET Type2 N-Channel (Dual)
FET FeatureStandard
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C5.6A
Rds On (Max) @ Id, Vgs29mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds914pF @ 6V
Power - Max1.4W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-UDFN Exposed Pad
Supplier Device PackageU-DFN2020-6 (Type B)

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