Name: DMN1023UCB4-7
Brand: Diodes Incorporated
SKU: DMN1023UCB4-7
Availability: InStock

REF: DMN1023UCB4-7 Diodes Incorporated

DMN1023UCB4-7

MOSFET N CH 5.1A U-WLB1010-4

DMN1023UCB4-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N CH 5.1A U-WLB1010-4. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 4-UFBGA, WLBGA.

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In Stock: 9,097

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	-
Drain to Source Voltage (Vdss)	-
Current - Continuous Drain (Id) @ 25°C	5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	23mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	U-WLB1010-4 (Type C)
Package / Case	4-UFBGA, WLBGA