Name: DMN1019USN-13
Brand: Diodes Incorporated
SKU: DMN1019USN-13
Price: 0.49 USD
Availability: InStock

REF: DMN1019USN-13 Diodes Incorporated

DMN1019USN-13

Diodes Incorporated

MOSFET N-CH 12V 9.3A SC59

DMN1019USN-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 12V 9.3A SC59. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3.

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In Stock: 7,305

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	9.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 2.5V
Rds On (Max) @ Id, Vgs	10mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50.6 nC @ 8 V

Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	2426 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	680mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-59-3
Package / Case	TO-236-3, SC-59, SOT-23-3