Name: DMN1008UFDF-13
Brand: Diodes Incorporated
SKU: DMN1008UFDF-13
Price: 0.52 USD
Availability: InStock

REF: DMN1008UFDF-13 Diodes Incorporated

DMN1008UFDF-13

Diodes Incorporated

MOSFET N-CH 12V 12.2A 6UDFN

DMN1008UFDF-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 12V 12.2A 6UDFN. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-UDFN Exposed Pad.

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In Stock: 2,223

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	12.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	8mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23.4 nC @ 8 V

Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	995 pF @ 6 V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	U-DFN2020-6 (Type F)
Package / Case	6-UDFN Exposed Pad