Name: DMJ70H1D4SJ3
Brand: Diodes Incorporated
SKU: DMJ70H1D4SJ3
Price: 1.17 USD
Availability: InStock

REF: DMJ70H1D4SJ3 Diodes Incorporated

DMJ70H1D4SJ3

Diodes Incorporated

MOSFET BVDSS: 651V~800V TO251 TU

DMJ70H1D4SJ3 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET BVDSS: 651V~800V TO251 TU. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

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In Stock: 1,502

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	700 V
Current - Continuous Drain (Id) @ 25°C	6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	273 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251 (Type TH)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA