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DMJ65H430SCTI

In Stock: 6,578
DMJ65H430SCTI - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMJ65H430SCTI Diodes Incorporated
DMJ65H430SCTI

Diodes Incorporated

MOSFET BVDSS: 501V~650V ITO-220A

DMJ65H430SCTI is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET BVDSS: 501V~650V ITO-220A. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack, Isolated Tab.

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In Stock: 6,578

Specifications

17 parameters
Product StatusLast Time Buy
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24.5 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds775 pF @ 100 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageITO220AB-N (Type HE)
Package / CaseTO-220-3 Full Pack, Isolated Tab

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