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DMHT10H032LFJ-13

In Stock: 7,171
DMHT10H032LFJ-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMHT10H032LFJ-13 Diodes Incorporated
DMHT10H032LFJ-13

Diodes Incorporated

MOSFET BVDSS: 61V~100V V-DFN5045

DMHT10H032LFJ-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET BVDSS: 61V~100V V-DFN5045. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 12-PowerVDFN, power - max 900mW.

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In Stock: 7,171

Specifications

14 parameters
Product StatusActive
FET Type4 N-Channel (Half Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Rds On (Max) @ Id, Vgs33mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds683pF @ 50V
Power - Max900mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case12-PowerVDFN
Supplier Device PackageV-DFN5045-12 (Type C)

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