Name: DMG6602SVT-7
Brand: Diodes Incorporated
SKU: DMG6602SVT-7
Price: 0.42 USD
Availability: InStock

REF: DMG6602SVT-7 Diodes Incorporated

DMG6602SVT-7

Diodes Incorporated

MOSFET N/P-CH 30V TSOT23-6

DMG6602SVT-7 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET N/P-CH 30V TSOT23-6. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6 Thin, TSOT-23-6, power - max 840mW.

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In Stock: 9,071

Specifications

14 parameters

Product Status	Not For New Designs
FET Type	N and P-Channel
FET Feature	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3.4A, 2.8A
Rds On (Max) @ Id, Vgs	60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 15V
Power - Max	840mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	TSOT-26