Name: DMG4N65CTI
Brand: Diodes Incorporated
SKU: DMG4N65CTI
Availability: InStock

REF: DMG4N65CTI Diodes Incorporated

DMG4N65CTI

MOSFET N-CH 650V 4A ITO220AB

DMG4N65CTI is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 650V 4A ITO220AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack, Isolated Tab.

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In Stock: 1,200

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13.5 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	900 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	8.35W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ITO-220AB
Package / Case	TO-220-3 Full Pack, Isolated Tab