Name: DMG4N60SK3-13
Brand: Diodes Incorporated
SKU: DMG4N60SK3-13
Availability: InStock

REF: DMG4N60SK3-13 Diodes Incorporated

DMG4N60SK3-13

MOSFET N-CH 600V 3.7A TO252 T&R

DMG4N60SK3-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 600V 3.7A TO252 T&R. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

Datasheet Request a Quote

In Stock: 3,637

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14.3 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	532 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	48W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63