Name: DMG4800LK3-13
Brand: Diodes Incorporated
SKU: DMG4800LK3-13
Price: 0.63 USD
Availability: InStock

REF: DMG4800LK3-13 Diodes Incorporated

DMG4800LK3-13

Diodes Incorporated

MOSFET N-CH 30V 10A TO252-3

DMG4800LK3-13 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 30V 10A TO252-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 3,148

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	17mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.7 nC @ 5 V

Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	798 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.71W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63