Name: DMG3N60SJ3
Brand: Diodes Incorporated
SKU: DMG3N60SJ3
Availability: InStock

REF: DMG3N60SJ3 Diodes Incorporated

DMG3N60SJ3

MOSFET N-CH 650V 2.8A TO251

DMG3N60SJ3 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET N-CH 650V 2.8A TO251. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

Datasheet Request a Quote

In Stock: 4,989

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12.6 nC @ 10 V

Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	354 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	41W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA