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DMG3415UFY4Q-7

In Stock: 113,735
DMG3415UFY4Q-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Single
REF: DMG3415UFY4Q-7 Diodes Incorporated
DMG3415UFY4Q-7

Diodes Incorporated

MOSFET P-CH 16V 2.5A X2-DFN2015

DMG3415UFY4Q-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET P-CH 16V 2.5A X2-DFN2015. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 3-XDFN.

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In Stock: 113,735

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)16 V
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs39mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds282 pF @ 10 V
FET Feature-
Power Dissipation (Max)650mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageX2-DFN2015-3
Package / Case3-XDFN

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