Name: DMG3415UFY4-7
Brand: Diodes Incorporated
SKU: DMG3415UFY4-7
Availability: InStock

REF: DMG3415UFY4-7 Diodes Incorporated

DMG3415UFY4-7

MOSFET P-CH 16V 2.5A DFN2015H4-3

DMG3415UFY4-7 is a Transistors - FETs, MOSFETs - Single manufactured by Diodes Incorporated. MOSFET P-CH 16V 2.5A DFN2015H4-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 3-XFDFN.

Datasheet Request a Quote

In Stock: 2,945

Specifications

17 parameters

Product Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	16 V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	39mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 4.5 V

Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	281.9 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	400mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN2015H4-3
Package / Case	3-XFDFN