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DMG1016UDWQ-7

In Stock: 3,895
DMG1016UDWQ-7 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMG1016UDWQ-7 Diodes Incorporated
DMG1016UDWQ-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT363 T&R

DMG1016UDWQ-7 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET BVDSS: 8V~24V SOT363 T&R. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 6-TSSOP, SC-88, SOT-363, power - max 330mW (Ta).

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In Stock: 3,895

Specifications

14 parameters
Product StatusActive
FET TypeN and P-Channel Complementary
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.066A (Ta), 845mA (Ta)
Rds On (Max) @ Id, Vgs450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs736.6nC @ 4.5V, 0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds60.67pF @ 10V, 59.76pF @ 16V
Power - Max330mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSOT-363

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