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DMC1018UPDWQ-13

In Stock: 2,775
DMC1018UPDWQ-13 - Diodes Incorporated - Transistors - FETs, MOSFETs - Arrays
REF: DMC1018UPDWQ-13 Diodes Incorporated
DMC1018UPDWQ-13

Diodes Incorporated

MOSFET BVDSS: 8V~24V POWERDI5060

DMC1018UPDWQ-13 is a Transistors - FETs, MOSFETs - Arrays manufactured by Diodes Incorporated. MOSFET BVDSS: 8V~24V POWERDI5060. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN, power - max 2.6W (Ta), 25W (Tc).

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In Stock: 2,775

Specifications

14 parameters
Product StatusActive
FET TypeN and P-Channel Complementary
FET FeatureStandard
Drain to Source Voltage (Vdss)12V, 20V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)
Rds On (Max) @ Id, Vgs17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30.4nC @ 8V, 19nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds1525pF @ 6V, 866pF @ 6V
Power - Max2.6W (Ta), 25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device PackagePowerDI5060-8 (Type UXD)

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